? 2004 ixys all rights reserved hiperfred tm epitaxial diode isoplus220 tm electrically isolated back surface notes: data given for t vj = 25 o c and per diode unless otherwise specified d pulse test: pulse width = 5 ms, duty cycle < 2.0 % e pulse test: pulse width = 300 s, duty cycle < 2.0 % ixys reserves the right to change limits, test conditions and dimensions. features z silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation z low cathode to tab capacitance (<15pf) z planar passivated chips z very short recovery time z extremely low switching losses z low i rm -values z soft recovery behaviour z epoxy meets ul 94v-0 applications z antiparallel diode for high frequency switching devices z antisaturation diode z snubber diode z free wheeling diode in converters and motor control circuits z rectifiers in switch mode power supplies (smps) z inductive heating z uninterruptible power supplies (ups) z ultrasonic cleaners and welders advantages z avalanche voltage rated for reliable operation z soft reverse recovery for low emi/rfi z low i rm reduces: - power dissipation within the diode - turn-on loss in the commutating switch i fav = 2x8 a v rrm = 600 v t rr = 35 ns v rsm v rrm type v v 600 600 dsea16-06ac preliminary data sheet dsea16-06ac * patent pending isoplus220 tm 3 2 isolated back surface * 1 symbol conditions maximum ratings i frms 35 a i favm t c = 145c; rectangular, d = 0.5 8 a i fsm t vj = 45c; t p = 10 ms (50 hz), sine 50 a e as t vj = 25c; non-repetitive 0.1 mj i as = 0.9 a; l = 180 h i ar v a = 1.5 v r typ.; f = 10 khz; repetitive 0.1 a t vj -55...+175 c t vjm 175 c t stg -55...+150 c p tot t c = 25c 60 w v isol 50/60 hz rms; i isol 1 ma 2500 v~ f c mounting force 11...65 / 2.4...11 n / lb weight typical 3 g symbol conditions characteristic values typ. max. i r c t vj = 25c v r = v rrm 60 a t vj = 150c v r = v rrm 0.25 ma v f d i f = 10 a; t vj = 125c 1.42 v t vj = 25c 2.50 v r thjc 2.5 k/w r thch 0.6 k/w t rr i f = 1 a; -di/dt = 50 a/s; 35 ns v r = 30 v; t vj = 25c i rm v r = 100 v; i f = 12 a; -di f /dt = 100 a/s 3.5 4.4 a t vj = 100c 3 1 2 ds98831a (2/04) see dsec 16-06a data sheet for characteristic curves
? 2004 ixys all rights reserved dsea16-06ac 200 600 1000 0 400 800 70 80 90 100 110 120 0.00001 0.0001 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 0 5 10 15 20 0.0 0.3 0.6 0.9 1.2 v fr di f /dt v 200 600 1000 0 400 800 0 10 20 30 40 100 1000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.0 0.5 1.0 1.5 2.0 2.5 0 5 10 15 20 25 30 i rm q r i f a v f -di f /dt -di f /dt a/ s a v nc a/ s a/ s t rr ns t fr z thjc a/ s s dsep 8-06a/dsec16-06a i f = 20a i f = 10a i f = 5a t vj = 100c v r = 300v t vj = 100c i f = 10a fig. 3 peak reverse current i rm versus -di f /dt fig. 2 reverse recovery charge q r versus -di f /dt fig. 1 forward current i f versus v f t vj = 100c v r = 300v t vj = 100c v r = 300v i f = 20a i f = 10a i f = 5a q r i rm fig. 4 dynamic parameters q r , i rm versus t vj fig. 5 recovery time t rr versus -di f /dt fig. 6 peak forward voltage v fr and t fr versus di f /dt i f = 20a i f = 10a i f = 5a t fr v fr fig. 7 transient thermal resistance junction to case constants for z thjc calculation: ir thi (k/w) t i (s) 1 1.449 0.0052 2 0.5578 0.0003 3 0.4931 0.0169 t vj =150c t vj =100c t vj = 25c note: fig. 2 to fig. 6 shows typical values
? 2004 ixys all rights reserved dsea16-06ac isoplus220 outline note: all terminals are solder plated. 1 - cathode 2 - common anode 3 - cathode
|
